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| New Product SUD08P06-155L Vishay Siliconix P-Channel 60-V (D-S), 175 C MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) () 0.155 at VGS = - 10 V 0.280 at VGS = - 4.5 V ID (A) - 8.4 - 7.4 Qg (Typ) 12.5 FEATURES * TrenchFET(R) Power MOSFETS * 175 C Rated Maximum Junction Temperature RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD08P06-155L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Continuing Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 C TC = 25 C TC = 100 C Symbol VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 - 8.4 -6 - 18 - 8.4 - 12 7.2 25a 2b - 55 to 175 mJ W C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. t 10 sec Steady State Symbol RthJA RthJC Typical 20 62 5 Maximum 25 75 6 C/W Unit Document Number: 73209 S-71660-Rev. B, 06-Aug-07 www.vishay.com 1 New Product SUD08P06-155L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 125 C VDS = - 60 V, VGS = 0 V, TJ = 175 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5 A Drain-Source On-State Resistanceb rDS(on) VGS = - 10 V, ID = - 5 A, TJ = 125 C VGS = - 10 V, ID = - 5 A, TJ = 175 C VGS = - 4.5 V, ID = - 2 A Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Timec Fall Timec Pulsed Current Forward Voltageb Reverse Recovery Time Reverse Recovery Time c b Symbol Test Conditions Min - 60 - 1.0 Typa Max Unit - 2.0 - 3.0 100 -1 - 50 - 150 V nA A A - 10 0.125 0.155 0.280 0.350 0.158 8 450 0.280 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDS = - 15 V, ID = - 5 A S VDS = - 25 V, VGS = 0 V, f = 1 MHz 65 40 12.5 19 pF VDS = - 30 V, VGS = - 10 V, ID = - 8.4 A f = 1 MHz VDD = - 30 V, RL = 3.57 ID - 8.4 A, VGEN = - 10 V, RG = 2.5 b 2.3 3.2 8.0 5 14 15 7 10 25 25 12 - 20 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25 C) ISM VSD trr Qrr A V ns nC IF = - 2 A, VGS = 0 V IF = - 8 A, di/dt = 100 A/s - 0.9 50 80 - 1.3 80 120 Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73209 S-71660-Rev. B, 06-Aug-07 New Product SUD08P06-155L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 30 VGS = 10 thru 6 V 24 I D - Drain Current (A) 5V 18 ID - Drain Current (A) 16 20 TC = - 55 C 25 C 12 125 C 12 4V 6 3V 0 0 2 4 6 8 10 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 12 TC = - 55 C 10 g fs - Transconductance (S) 25 C 125 C rDS(on) - On-Resistance () 0.25 0.30 Transfer Characteristics 8 0.20 VGS = 4.5 V VGS = 10 V 6 0.15 4 0.10 2 0.05 0 0 2 4 6 8 10 0.00 0 4 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance 800 700 V GS - Gate-to-Source Voltage (V) 16 600 C - Capacitance (pF) 500 400 300 200 Coss 100 0 0 Crss 10 20 30 40 50 60 Ciss 20 On-Resistance vs. Drain Current VDS = 30 V ID = 8.4 A 12 8 4 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 73209 S-71660-Rev. B, 06-Aug-07 Gate Charge www.vishay.com 3 New Product SUD08P06-155L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 2.3 VGS = 10 V ID = 50 A 1 rDS(on) - On-Resistance (Normalized) 1.7 I S - Source Current (A) TJ = 150 C 10 2.0 1.4 0.1 1.1 TJ = 25 C 0.01 0.8 0.001 - 25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 0.5 - 50 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 10 100 10 s 8 I D - Drain Current (A) I D - Drain Current (A) 10 *Limited by rDS(on) 100 s 6 1 1 ms 10 ms 100 ms, DC 4 0.1 2 0.01 TC = 25 C Single Pulse 0 0 25 50 75 100 125 150 175 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified TC - Case Temperature (C) Drain Current vs. Case Temperature Safe Operating Area www.vishay.com 4 Document Number: 73209 S-71660-Rev. B, 06-Aug-07 SUD08P06-155L Vishay Siliconix THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 4 10-- 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 4 10-- 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73209. Document Number: 73209 S-71660-Rev. B, 06-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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