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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -7 -4 -8 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1101 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA ,IC=0 -7 V VCEsat -1 Collector-emitter saturation voltage IC=-2A; IB=-4mA -1.5 V VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-40mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-2A; IB=-4mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-4A; IB=-40mA -3.5 V ICBO Collector cut-off current ICEO hFE Collecto cut-off current ANG CH VCB=-60V; IE=0 -100 |I A VCE=-50V; RBE= DC current gain VD Diode forward voltage Switching times ton ts tf Turn-on time Storage time Fall time IC=-2A IB1=-IB2=-4mA IN EMIC ES IC=-2A ; VCE=-3V ID=4A; DUC ON 1000 0.8 4.0 1.0 TOR -10 |I 20000 3.0 A V |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1101 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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