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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 2SB834 TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR FEATURES Power dissipation PCM: 1.5 W (Tamb=25) 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on Time Storage Time Turn-off Time VCE(sat) VBE VCE=-5V, IC=-3A IC=-3A, IB=-0.3A VCE=-5V, IC=-500mA VCE=-5V,I C=-500mA VCB=-10V, IE=0, f=1MHz 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-50mA, IB=0 IE=-100A, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 VCE=-5V, IC=-500mA -60 -60 -7 -100 -100 60 20 -1 -1 9 150 0.4 A A 200 V V MHz pF s s s fT Cob ton tstg toff VCC=-30V, Ic=-2A, IB!=IB2=-0.2A 1.7 0.5 CLASSIFICATION OF hFE(1) Rank Range O 60-120 Y 100-200 |
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