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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1444 DESCRIPTION *With TO-66 package *Excellent safe operating area *Low collector saturation voltage APPLICATIONS *For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 80 60 6 6 1 40 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IE=1mA ;IC=0 IC=6A; IB=1A IC=6A ; VCE=4V VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 30 15 MIN 60 5 2SC1444 TYP. MAX UNIT V V 1.5 2.0 0.1 0.1 V V mA mA 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1444 Fig.2 outline dimensions 3 |
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