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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1755 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Emitter-base voltage Collector current (DC) Collector current-peak Junction temperature Storage temperature SEM GE Ta=25ae TC=25ae Open collector OND IC TOR UC VALUE 300 300 7 0.2 0.7 1.2 UNIT V V V A A PC Collector power dissipation 15 150 -40~150 ae ae W Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50mA ;IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=10mA ; VCE=30V f=1MHz;VCB=50V 40 50 MIN 300 2SC1755 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.0 0.1 0.1 200 |I |I V A A MHz 5.3 pF hFE classifications C 40-80 D E 60-120 100-200 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1755 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1755 4 |
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