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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 300V(Min) *High Current-Gain--Bandwidth Product: fT= 20MHz(Min)@IC= 20mA APPLICATIONS *Power amplifier applications *Color TV sound output applications *Recommended for sound output stage in line operated TV ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 300 V 300 V 5 V 150 mA 50 mA 1.5 W 25 .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2242 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 10V 0.9 V ICBO Collector Cutoff Current VCB= 240V; IE=0 1.0 A IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 A hFE DC Current Gain IC= 50mA ; VCE= 10V COB Output Capacitance fT Current-Gain--Bandwidth Product w w scs .i w IE= 0 ; VCB= 50V; ftest=1MHz IC= 20mA ; VCE= 50V .cn mi e 40 20 170 5.5 12 pF 50 MHz isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC2242
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