![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SMD Type Transistors Silicon NPN Triple Diffused Type Transistor 2SC4615 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Large current calcity (IC=1A) +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC=25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 400 400 5 2 1 1 15 150 -55 to +150 Unit V V V A A W W 3.80 High blocking voltage(VCEO 400V) www.kexin.com.cn 1 SMD Type 2SC4615 Electrical Characteristics Ta = 25 Parameter Collector cut-off Current Emitter Cut-off Current DC Current Gain Gain-Bandwidth product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output capacitance Turn-ON Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO cob ton Testconditons VCB=300V,IE=0 VEB=4V,IC=0 VCE=10V,IC=100mA VCE=10V,IC=50mA IC=200mA,IB=20mA IC=200mA,IB=20mA IC=10iA,IE=0 IC=1mA,RBE= IE=10iA,IC=0 VCB=30V,f=1MHz 400 400 5 40 Min Transistors Typ Max 1 1 200 Unit iA iA 70 1 1 MHz V V V V V 8 11 pF Storage Time tstg 4 is Fall Time tr Unit (Resistance:U ,Capacitance:F) 0.65 hFE Classification TYPE hFE C 40 to 80 D 60 to 120 E 100 to 200 2 www.kexin.com.cn |
Price & Availability of 2SC4615
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |