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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1308 DESCRIPTION *With TO-220 package *Low collector saturation voltage *DARLINGTON *Complement to type 2SB974 APPLICATIONS *For audio frequency power amplifier and low speed switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 5 10 0.5 30 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=2A; IB=2mA IC=2A; IB=2mA VCB=100V ;IE=0 VEB=7V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V 2000 500 MIN 100 2SD1308 TYP. MAX UNIT V 1.5 2.0 1.0 5.0 20000 V V A mA Switching times ton ts tf Turn-on time Storage time Fall time IC=2A; IB1=-IB2=2mA RL=25; VCC50V 1.0 3.5 1.2 s s s hFE-1 classifications M 2000-5000 L 4000-10000 K 8000-20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1308 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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