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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS BD135 BD137 Open emitter BD139 VCEO VEBO IC ICM IBM Pt Tj Tstg Tamb HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature BD135 BD137 BD139 GE S Open base EMIC OND TOR UC VALUE 45 60 100 45 60 100 5 1.5 2 1 UNIT V V Open collector V A A A W ae ae ae TmbU 70ae 8 150 -65~150 -65~150 Operating ambient temperature THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS BD135 BD137 BD139 SYMBOL MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 V VBE Base-emitter voltage IC=500mA ; VCE=2V VCB=30V; IE=0 1.0 V 100 nA ICBO Collector cut-off current VCB=30V; IE=0 Tj=125ae 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 100 nA hFE-1 DC current gain DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 IC=5mA ; VCE=2V 40 63 63 100 25 250 160 250 hFE-2 hFE-3 fT DC current gain Transition frequency IC=150mA ; VCE=2V IC=500mA ; VCE=2V IC=50mA; VCE=5V ;f=100MHz IN ANG CH EMIC ES OND TOR UC 190 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD135 BD137 BD139 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of BD137
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