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| CHU3377 RoHS COMPLIANT W-band Multifunction: Multiplier / MPA GaAs Monolithic Microwave IC Description The CHU3377 is a W-band monolithic multifunction, which integrates an input buffer, a frequency multiplier by three followed by an amplifier splitter and two W-band chains in parallel combined at the output. Each W-band chain includes a frequency multiplier and a medium power amplifier. The frequency multipliers are based on active transistors and allow operation at low input level with reduced power consumption. All the active devices are internally self-biased to ease bias configuration. This chip is compatible with automatic equipment for assembly. The circuit is manufactured with the P-HEMT process: 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN 12.75GHz 76. 5GHz x2 x3 OUT Tx / PH15 x2 -V +V W-band multifunction block-diagram 20 18 16 14 P_out (dBm) 12 10 8 6 4 2 0 75,0 75,5 76,0 76,5 F_out (GHz) 77,0 77,5 78,0 Main Features -40 to +125 temperature range C C Low temperature dependence Low AM noise High output power Wide operating frequency range Low input power On-chip self biasing Very simple bias configuration Low DC power consumption Automatic assembly oriented BCB layer protection Chip size: 3.86 x 1.62 x 0.1mm 20 18 16 14 P_out (dBm) 12 10 8 6 4 2 0 Typical P_out (F_out) measurement -40 -25 -10 +5 +20 +35 +50 Top (C) +65 +80 +95 +110 +125 Typical P_out (Top) measurement Main Characteristics Tamb = +25 C Symbol F_in P_in F_out P_out Input frequency Input power Output frequency Output power Parameter Min 12.67 0 76 Typ Max 12.83 8 77 Unit GHz dBm GHz dBm 15 1/6 Ref.: DSCHU33777082 - 23 Mar 07 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU3377 Electrical Characteristics W-band Multiplier/MPA Full operating temperature range, used according to section "Typical assembly and bias configuration" Symbol F_in F_out P_in VSWR_in P_out VSWR_out Input frequency Parameter (1) Min 12.67 76 0 12 Typ Max 12.83 77 Unit GHz GHz dBm dBm Output frequency Input power at IN port IN port VSWR on 50 load Output power at OUT port on load VSWR 1.5:1 OUT port VSWR on 50 load Amplitude noise @ 1kHz (SSB) @ 10kHz (SSB) 4 1.5:1 15 1.5:1 -135 -142 -151 -153 -155 -50 -35 8 2.5:1 17 2.5:1 -125 -137 -144 -146 -150 -40 -25 -50 An @ 100kHz (SSB) @ 200kHz (SSB) 1MHz (SSB) Harmonics output power (@ k*6.375 GHz) dBc/Hz Hn_p NHn_p +V +I -V -I Top @ 6.375 GHz to 51 GHz @ 57.375 GHz to 102 GHz Non harmonics output power Positive supply voltage Positive supply current Negative supply voltage Negative supply current Operating temperature range (2) -40 -4.7 +4.4 dBm dBm V mA V mA C +4.5 210 -4.5 11 +4.6 275 -4.3 18 +125 (1) All the parameters are given in the following conditions: - OUT Port: 50 reference plan at 200m (0.15nH) bonding length from OUT pad. (2) Chip backside metal temperature. Absolute Maximum Ratings (2) Symbol P_in +V -V +I -I Tstg Parameter Input power Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range Values 9 +5 -5 325 25 -55 to +150 Unit dBm V V mA mA C (2) Operation of this device above anyone of these parameters may cause permanent damage. CAUTION: Positive supply voltage must not be applied without negative supply voltage. ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref.: DSCHU33777082 - 23 Mar 07 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multiplier/MPA Chip Mechanical Data and Pin References 2 410 2135 3 CHU3377 3720 1470 4 1 680 750 70 Origin 0,0 Layout 3790x1550 Unit = m External chip size (layout size + dicing streets) = 3860 x 1620 35 Chip thickness = 100 +/- 10 RF Pads (1, 5) = 90 x 110 (BCB opening) DC/IF Pads = 100 x 100 (BCB opening) Pin number 1 2 3 4 Pin name IN -V +V OUT RF Input port Description Negative supply voltage port Positive supply voltage port RF Output port Ref.: DSCHU33777082 - 23 Mar 07 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU3377 Typical Assembly and Bias Configuration DC lines -V +V W-band Multiplier/MPA >= 47pF >= 47pF L_in L_out -strip line -strip line This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. An external chip capacitor of at least 47pF is necessary for the positive and negative supply voltages. For the RF pads the equivalent wire bonding inductance (diameter=25m) have to be according to the following recommendation. Pin name IN OUT Equivalent inductance L_in 0.3 nH L_out 0.15 nH (2) Wire length (1) 0.4 mm 0.2 mm (2) (1) This value is the total length including the necessary loop from pad to pad. (2) For longer wire length or higher inductance, an external compensation is required to match 50 between OUT Pin and 0.15nH wire inductance plan. (For example with a matching network on the substrate) Chip backside must be RF grounded. Ref.: DSCHU33777082 - 23 Mar 07 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multiplier/MPA CHU3377 Ref.: DSCHU33777082 - 23 Mar 07 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU3377 W-band Multiplier/MPA Ordering Information Chip form : CHU3377-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref.: DSCHU33777082 - 23 Mar 07 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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