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| Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 REPETITIVE AVALANCHE AND dv/dt RATED IRFN3710 N-CHANNEL HEXFET(R) TRANSISTOR 100 Volt, 0.028, HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The Surface Mount Device 1 (SMD-1) package represents anothther step in the continual evolution of surface mount technology. Designed to be a close replacement for the TO-3 package, the SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electical performance. Product Summary Part Number IRFN3710 BVDSS 100V RDS(on) 0.028 ID 45A Features: n n n n n n n n Surface Mount Small Footprint Alternative to TO-3 Package Hermetically Sealed Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C Continuous Drain Current ID @ VGS = 10V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Package Mounting Surface Temperature Weight 300 (for 5 sec.) 2.6 (typical) IRFN3710 45 28 180 125 1.0 20 690 27 12.5 5.0 -55 to 150 Units A W W/K V mJ A mJ V/ns oC g To Order Previous Datasheet IRFN3710 Device Index Next Data Sheet Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temp. Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current Min. 100 -- -- -- 2.0 24 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units -- -- V Test Conditions I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance VGS = 0V, ID = 1.0 mA 0.120 -- V/C Reference to 25C, ID = 1.0 mA -- 0.028 VGS = 12V, I D =28A -- 0.032 VGS = 12V, I D = 45A -- 4.0 V VDS = VGS , ID = 250 mA -- -- S( ) VDS > 15V, IDS = 28A -- 25 VDS =0.8 x Max Rating,V GS=0V A -- 250 VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C -- 100 VGS = 20V nA -- -100 VGS = -20V -- 190 VGS =10V, ID =45 A -- 26 nC VDS = Max. Rating x 0.5 -- 82 14 -- VDD = 50V, ID =45A, 59 -- ns R G = 4.3 58 -- 48 8.7 -- -- Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances. LS Internal Source Inductance -- 8.7 -- nH Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 3000 640 330 -- -- -- pF VGS = 0V, VDS = 25V f = 1.0 MHz To Order Previous Datasheet Index Next Data Sheet IRFN3710 Device Source-Drain Diode Ratings and Characteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Min. Typ. Max. Units -- -- -- -- 45 180 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. VSD Diode Forward Voltage t rr Reverse Recovery Time Q RR Reverse Recovery Charge ton Forward Turn-On Time -- -- -- -- -- -- 1.3 210 1.7 V ns C Tj = 25C, IS = 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC Board Min. Typ. Max. Units Test Conditions -- -- -- TBD 1.0 -- K/W Soldered to a copper-clad PC board Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 45A, VGS = 10V, 25 R G 200 ISD 45A, di/dt 460 A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C To Order Previous Datasheet Index Next Data Sheet IRFN3710 Device Case Outline and Dimensions -- SMD-1 All dimensions in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/96 To Order |
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