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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION *High Breakdown Voltage: V(BR)CBO= 1100V(Min) *Fast Switching speed *Wide Area of Safe Operation *High Reliability APPLICATIONS *Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 25 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature 4 A PC 140 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC=5mA; RBE= IC= 4A; IB1= 0.4A;IB2= -0.8A L= 1mH, Clamped IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A B KSC5031 MIN 800 800 1100 7 TYP. MAX UNIT V V V V 2.0 1.5 10 10 10 8 155 15 40 V V A A IC= 4A; IB= 0.8A B VCB= 800V; IE= 0 VEB= 5V; IC= 0 IC=0.6A ; VCE= 5V IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1.0MHz IC= 0.6A; VCE= 10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= 6A , IB1= 1.2A; IB2= -2.4A RL= 66.7; VCC= 400V 0.5 3.0 0.3 s s s hFE-1 Classifications N 10-20 R 15-30 O 20-40 isc Websitewww.iscsemi.cn 2 |
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