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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N5989 2N5990 2N5991 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5989 2N5990 Collector-base voltage VCEO INCH Base current Collector-emitter voltage ANG 2N5991 2N5989 2N5990 SEM E Open base Open emitter OND IC TOR UC VALUE 60 80 100 40 60 80 UNIT V V 2N5991 Open collector VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak 5 12 20 4 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5989 VCEO(SUS) Collector-emitter sustaining voltage 2N5990 2N5991 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5989 ICEO Collector cut-off current IC=6A ;IB=0.6A IC=12A; IB=1.8A IC=12A; IB=1.8A IC=6A ; VCE=2V VCE=20V; IB=0 VCE=30V; IB=0 VCE=40V; IB=0 IC=0.2A ;IB=0 2N5989 2N5990 2N5991 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 0.6 1.7 2.5 1.4 V V V V ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT Collector cut-off current 2N5990 2N5991 Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency IN ANG CH EMIC ES VEB=5V; IC=0 IC=1.5A ; VCE=2V IC=6A ; VCE=2V IC=12A ; VCE=2V VCE=RatedVCE;VBE=-1.5V TC=125ae OND TOR UC 0.2 2.0 1.0 120 2.0 mA mA mA 40 20 7.0 300 2.0 pF MHz IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=10V;f=1MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5989 2N5990 2N5991 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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