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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION *With TO-220 package *Complement to type 2SC1985/1986 *Low collector saturation voltage APPLICATIONS *For general and industrial purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA770 VCBO Collector-base voltage 2SA771 2SA770 VCEO Collector-emitter voltage 2SA771 VEBO IC IB B CONDITIONS VALUE -60 UNIT Open emitter -80 -60 Open base -80 Open collector -6 -6 -3 TC=25 40 150 -55~150 V V Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SA770 V(BR)CEO Collector-emitter breakdown voltage 2SA771 VCEsat Collector-emitter saturation voltage 2SA770 ICBO Collector cut-off current 2SA771 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-3A; IB=-0.3A VCB=-60V; IE=0 IC=-25mA ,IB=0 CONDITIONS 2SA770 2SA771 MIN -60 TYP. MAX UNIT V -80 -1.0 V -1.0 VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-12V 40 10 -1.0 mA mA MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3 0.9 1.0 0.1 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA770 2SA771 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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