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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature SEM GE Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE -60 -60 -6 -4 -6 -1 UNIT V V V A A A W ae ae TC=25ae 25 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-3A; IB=-6mA IC=-3A; IB=-6mA VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0.2A ; VCE=-12V IE=0; f=1MHz;VCB=-10V 2000 MIN -60 2SB1257 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -1.5 -2.0 -10 -10 |I |I V V A A 150 75 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time ANG CH IN EMIC ES IC=-3A; IB1=-IB2=-10mA VCC=-30V ,RL=10| OND TOR UC 0.4 |I 0.8 0.6 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1257 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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