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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION *Collector-Emitter Breakdown Voltage:V(BR)CEO= 150V(Min) *Wide Area of Safe Operation *Complement to Type 2SA940 APPLICATIONS *Power amplifier applications. *Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25 w ww scs .i VALUE 150 150 5 1.5 0.5 1.5 25 150 -55~150 UNIT V .cn mi e V V A A PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2073 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 10V 0.85 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 A hFE DC Current Gain IC= 500mA ; VCE= 10V 40 140 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain--Bandwidth Product w w scs .i w IC= 500mA; VCE= 10V .cn mi e 35 pF 4 MHz isc Websitewww.iscsemi.cn 2 |
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