 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS *Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i UNIT 100 V 50 V 15 V 15 A 25 A 4 A .cn mi e ICP Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 60 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3300 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 A IEBO Emitter Cutoff Current hFE DC current gain fT Current-Gain--Bandwidth Product w w. w .cn mi cse is IC= 5A ; VCE= 1V 60 IE= -1A ; VCE= 12V VEB= 15V ; IC= 0 10 A 360 18 MHz isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC3300
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |