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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION *With TO-220C package *Low collector saturation voltage *High breakdown voltage *Fast switching speed APPLICATIONS *For high voltage switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current -DC Collector current-Peak Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 400 400 7 2 4 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=1.0A ;IB1=0.1A,L=1mH IC=1mA ;IB=0 IC=50A ;IE=0 IE=50A ;IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IE=-0.1A ; VCE=10V;f=5MHz IE=0; f=1MHz ; VCB=10V 25 MIN 400 400 400 7 SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB 2SC3969 TYP. MAX UNIT V V V V 1.0 1.5 10 10 50 10 30 V V A A MHz pF Switching times ton ts tf Turn-on time Storage time Fall time VCC@200V ,IC=0.8A IB1=-IB2=0.08A;RL=250B 1.0 2.5 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3969 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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