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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4533 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 500 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 7 Emitter-base voltage Open collector Collector current (DC) Collector current-Peak Base current TC=25ae 3 6 1.2 30 UNIT V V V A A A PC Collector power dissipation Ta=25ae 2 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1.2A ; VCE=2V IC=0.2A ; VCE=10V;f=1MHz 10 8 10 MIN 400 2SC4533 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA 40 Switching times ton ts tf NDU ICO E SEM ANG INCH Turn-on time Storage time Fall time IC=1.5A; IB1=0.15A IB2=-0.3A;VCC=200V TOR 1.0 3.0 0.3 MHz |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4533 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4533 TOR NDU ICO E SEM ANG INCH 4 |
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