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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) *Small Collector Ouptut Capacitance APPLICATIONS *High voltage switching and amplifier applications. *Color TV horizontal driver applications. *Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i UNIT 300 V 300 V 7 V 0.1 A 50 mA 8 W .cn mi e IB Base Current-Continuous Collector Power Dissipation @TC=25 PC Collector Power Dissipation @Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4544 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10mA; IB= 1mA 1.0 V ICBO Collector Cutoff Current VCB= 240V ; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product w w w. sem isc IC= 4mA ; VCE= 10V IC= 20mA ; VCE= 10V IE= 0; VCB= 20V; f= 1MHz IC= 20mA ; VCE= 10V .cn i 20 30 3.0 50 70 1.0 A 200 pF MHz isc Websitewww.iscsemi.cn 2 |
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