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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1000 450 9 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector current-peak Ta=25ae 4 8 2 Collector power dissipation TC=25ae 25 150 -55~150 UNIT V V V A A PC W Tj Tstg Junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC5416 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 450 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4 A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4 A 1.5 V ICBO Collector cut-off current VCB=450V; IE=0 10 |I A ICES Collector cut-off current VCE=1000V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 hFE-2 Switching times ts tf TOR NDU ICO E SEM ANG INCH DC current gain IC=1.5A ; VCE=5V 10 Storage time IC=2A;IB1=0.4A ;IB2=-0.8A Fall time DC current gain IC=0.1A ; VCE=5V 30 50 2.5 |I s 0.15 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5416 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5416 TOR NDU ICO E SEM ANG INCH 4 |
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