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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER VCBO VCEO CHA IN Collector current Collector-base voltage E SEM NG 2SD1562 2SD1562A 2SD1562 2SD1562A OND IC CONDITIONS TOR UC VALUE 120 160 120 UNIT Open emitter V Collector-emitter voltage Open base 160 Open collector 5 1.5 3.0 TC=25ae 20 V VEBO IC ICM Emitter-base voltage V A A Collector current-peak PC Collector power dissipation Ta=25ae 1.5 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1562 V(BR)CEO Collector-emitter breakdown voltage 2SD1562A 2SD1562 V(BR)CBO Collector-base breakdown voltage 2SD1562A V(BR)EBO VCEsat VBEsat ICBO IEBO Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on saturation voltage Collector cut-off current Emitter cut-off current IE=50|I A; IC=0 IC=50|I A; IE=0 IC=1mA; IB=0 CONDITIONS 2SD1562 2SD1562A SYMBOL MIN 120 TYP. MAX UNIT V 160 120 V 160 5 2.0 1.5 V V V |I |I A A IC=1 A;IB=0.1 A IC=1 A;IB=0.1 A VCB=120V; IE=0 VEB=4V; IC=0 hFE DC current gain fT COB CHA IN Transition frequency Output capacitance E SEM NG 2SD1562 2SD1562A IC=0.1A ; VCE=5V OND IC 60 60 TOR UC 1.0 320 200 80 20 1.0 IE=-0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz MHz pF hFE classifications TYPE 2SD1562 2SD1562A D 60-120 60-120 E 100-200 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1562 2SD1562A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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