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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 DESCRIPTION *With TO-220F package *Complement to type 2SB1366 *Low collector saturation voltage *Collector power dissipation: PC=25W(TC=25) APPLICATIONS *Audio frequency power amplifier and general purpose switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 3 0.5 2.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 100 20 3 35 MIN 60 2SD2012 TYP. MAX UNIT V 1.0 1.0 100 100 320 V V A A MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2012 Fig.2 Outline dimensions 3 |
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