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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae Open base Open collector 150 5 2 25 150 -55~150 Emitter UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IB=0 IC=500m A;IB=50m A VCB=150V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=10V IC=0.4A ; VCE=10V 40 5 MIN 150 200 5 TYP. 2SD401 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT MAX UNIT V V V 1.0 50 50 400 |I |I V A A hFE classifications R 40-80 O TOR NDU ICO E SEM ANG INCH Y G 70-140 120-240 200-400 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD401 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 TOR NDU ICO E SEM ANG INCH 4 |
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