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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 DESCRIPTION *With TO-220C package *Complement to type BDT91 APPLICATIONS *For use in general purpose power amplifier and switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION * Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -10 -6 90 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.39 UNIT /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDT92 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-100mA; IB=0 IC=-3 A;IB=-0.3 A IC=-10 A;IB=-3.3 A IC=-4A ; VCE=-4V VCB=-60V; IE=0 VCE=-30V; IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V 20 5 4 MHz MIN -60 -1.1 -3.0 -1.6 -0.1 -1.0 -1.0 200 TYP. MAX UNIT V V V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDT92 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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