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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE FS50VS-3 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 10V DRIVE VDSS ................................................................................ 150V rDS (ON) (MAX) .............................................................. 31m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ........... 130ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tc = 25C) Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 150 20 50 200 50 50 200 125 -55 ~ +150 -55 ~ +150 1.2 Unit V V A A A A A W C C g Feb.1999 L = 100H 4.5 (1.5) MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50 ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Test conditions Limits Min. 150 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 -- 130 Max. -- 0.1 0.1 4.0 31 0.775 -- -- -- -- -- -- -- -- 1.5 1.0 -- Unit V A mA V m V S pF pF pF ns ns ns ns V C/W ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2 POWER DISSIPATION PD (W) 160 DRAIN CURRENT ID (A) 120 102 7 5 3 2 101 7 5 3 2 tw = 10ms 100ms 1ms 10ms 80 40 100 0 0 50 100 150 200 DC 7 TC = 25C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100 VGS = 20V 10V 8V 7V 6V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 20V 10V 7V 6V TC = 25C Pulse Test DRAIN CURRENT ID (A) 80 TC = 25C Pulse Test DRAIN CURRENT ID (A) 40 5V 60 30 40 5V PD = 125W 20 20 10 4V 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0 40 ID = 100A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 80A 32 1.2 50A 24 VGS = 10V 20V 0.8 16 0.4 TC = 25C Pulse Test 20A 8 0 0 0 4 8 12 16 20 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 0 0 4 8 12 16 20 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) tf tr td(on) 103 7 5 3 2 Coss Crss 102 7 Tch = 25C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test TC = 125C GATE-SOURCE VOLTAGE VGS (V) 20 Tch = 25C ID = 50A 16 VDS = 50V SOURCE CURRENT IS (A) 80 12 80V 100V 60 75C 25C 8 40 4 20 0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 5.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 0.5 5 3 0.2 2 0.1 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse D = 1.0 1.2 1.0 0.8 PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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