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| SMD Type HEXFET Power MOSFET KRF7501 IC IC Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Single Pulse tp 10 s Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGSM VGS dv/dt TJ, TSTG R JA *1 *1 Symbol VDS ID ID IDM PD PD Rating 20 2.4 1.9 19 1.25 0.8 0.01 16 12 5 -55 to + 150 100 /W W W W/ V V V/ns A Unit A *2 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7501 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = 1.7A, VGS = 0V*1 TJ = 25 , IF = 1.7A.VR=10V di/dt = 100A/ s*1 39 37 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A TJ ID = 1mA,Reference to 25 VGS = 4.5V, ID = 1.7A*1 VGS = 2.7V, ID =0.85A*1 Min 20 Typ Max Unit V 0.041 0.085 0.135 0.120 0.70 2.6 1.0 25 -100 100 5.3 0.84 2.2 5.7 24 15 16 260 130 61 1.25 8.0 1.3 3.3 0.20 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = 250 A VDS = 10V, ID = 0.85A*1 VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125 V S A IGSS VGS = 12V VGS = -12V ID = 1.7A VDS = 16V VGS = 4.5V,*1 VDD = 10V ID = 1.7A RG =6.0 RD = 5.7 VGS = 0V VDS = 15V f = 1.0MHz nA nC ns pF A Body Diode) *2 19 1.2 59 56 V ns nC *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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