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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJL21194 DESCRIPTION *With TO-3PL package *Complement to type MJL21193 *Excellent gain linearity APPLICATIONS *Designed for high power audio output,disk head positioners and linear applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PL) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 400 250 5 16 30 5 200 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJL21194 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=100mA ;IB=0 250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V Base-emitter on voltage IC=8A ; VCE=5V 2.2 V ICEX Collector cut-off current VCE=250V; VBE(off)=1.5V VCE=200V; IB=0 100 A ICEO Collector cut-off current 100 A IEBO Emitter cut-off current VEB=5V; IC=0 100 A hFE-1 DC current gain IC=8A ; VCE=5V 25 75 hFE-2 DC current gain IC=16A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V,f=1MHz 4 MHz COB Collector output capacitance f=1MHz;VCB=10V,IE=0 500 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJL21194 Fig.2 Outline dimensions (unindicated tolerance:0.50 mm) 3 |
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