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Freescale Semiconductor Technical Data
Document Number: MRF9045N Rev. 12, 9/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
NOT RECOMMENDED FOR NEW DESIGN
* Typical Performance at 945 MHz, 28 Volts Output Power -- 45 Watts PEP Power Gain -- 19 dB Efficiency -- 41% (Two Tones) IMD -- - 31 dBc * Integrated ESD Protection * Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * 200_C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
945 MHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, + 15 177 1.18 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.85 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF9045NR1 1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
MRF9045NR1
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
NOT RECOMMENDED FOR NEW DESIGN
Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz)
VGS(th) VGS(Q) VDS(on) gfs
2 3 -- --
2.8 3.7 0.22 4
4 5 0.4 --
Vdc Vdc Vdc S
Ciss Coss Crss
-- -- --
70 38 1.7
-- -- --
pF pF pF
Gps
17
19
--
dB
38
41
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 14
-9
dB
Gps
--
19
--
dB
--
41
--
%
IMD
--
- 31
--
dBc
IRL
--
- 13
--
dB
MRF9045NR1 2 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)
B1 VGG + C6 C7 C14
B2 + C15 + C16 + VDD C17
L1 C5 C9 DUT Z8 Z9 C8 C2 C3 C4 Z10
L2 Z11 Z12 C13
NOT RECOMMENDED FOR NEW DESIGN
RF INPUT Z1
C1 Z2
Z3
Z4
Z5
Z6
Z7
C10
C11
C12
B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6, C15, C16 C10 C11 C12 C17 L1, L2 Z1 Z2
Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors 2.7 pF Chip Capacitors 3.9 pF Chip Capacitor 10 pF Chip Capacitors 10 F, 35 V Tantalum Surface Mount Capacitors 2.2 pF Chip Capacitor 4.7 pF Chip Capacitor 1.2 pF Chip Capacitor 220 F, 50 V Electrolytic Capacitor 12.5 nH Inductors 0.20 x 0.08 Microstrip 0.57 x 0.12 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13
0.14 0.47 0.16 0.18 0.56 0.33 0.14 0.36 1.01 0.15 0.29
x 0.32 x 0.32 x 0.32 x 0.62 x 0.62 x 0.32 x 0.32 x 0.08 x 0.08 x 0.08 x 0.08
Microstrip Microstrip x 0.62 Taper Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Figure 1. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic
C6 Vbias B1 B2 C7 C5 WB1 WB2 C4 CUT OUT AREA C9 C8 C10 C11 C12 C13 C14 L2 C15 C16 A2 C17 Vsupply
L1 A1 C1 C2 C3
Ground
MRF9045MR1
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9045NR1 RF Device Data Freescale Semiconductor 3
NOT RECOMMENDED FOR NEW DESIGN
RF OUTPUT Z13
B1 VGG + C7 C8 L1 L2 C14
B2 + C15 + C16 + VDD C17
NOT RECOMMENDED FOR NEW DESIGN
RF INPUT Z1
C1 Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z8
Z9
Z10
Z11
Z12
C13
C2
C3
C4
C6
C10
C11
C12
B1 B2 C1, C8, C13, C14 C2 C3 C4 C5, C6, C9, C10 C7, C15, C16 C11 C12 C17 L1, L2 WB1, WB2
Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 3.6 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Johanson Gigatrim 10 pF Chip Capacitors 10 F, 35 V Tantalum Chip Capacitors 7.5 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim 220 F Electrolytic Chip Capacitor 12.5 nH Surface Mount Inductors 10 mil Brass Wear Blocks
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Board
0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520 Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF - 35 - 0300, r = 3.5
Figure 3. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic
C17 VDD C15 C16
C7 VGG B1 C8 C14 L2 WB2 C9 C10 C11 B2
INPUT
C1 C2
WB1
L1 C3 C4
C5
C13 C12
OUTPUT
CUT OUT AREA
C6
MRF9045MB 900 MHz Rev-02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9045NR1 4 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
C5
C9
RF OUTPUT Z13
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 935 940 945 950 955 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two-Tone Measurement 100 kHz Tone Spacing Gps 50 45 40 35 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) -30 IMD IRL -32 -34 -36 -38 960 -10 -12 -14 -16 -18
NOT RECOMMENDED FOR NEW DESIGN
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc) 21 20.5 G ps , POWER GAIN (dB) 20 420 mA 350 mA IDQ = 525 mA -15 -20 -25 -30 -35 -40 -45 VDD = 28 Vdc -50 f1 = 945 MHz, f2 = 945.1 MHz -55 0.1 420 mA 1 10 100 IDQ = 280 mA 350 mA 525 mA
19.5 19
18.5 18
280 mA VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100
17.5 17 0.1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
Figure 7. Intermodulation Distortion versus Output Power
22 60 Gps 50 40 30 20 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz 1 10 10 0 100
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 7th Order -70 -80 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 5th Order VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order
20 G ps , POWER GAIN (dB) 18 16 14 12 10 0.1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Intermodulation Distortion Products versus Output Power
Figure 9. Power Gain and Efficiency versus Output Power
MRF9045NR1 RF Device Data Freescale Semiconductor 5
NOT RECOMMENDED FOR NEW DESIGN
, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 22 1011 MTTF FACTOR (HOURS X AMPS2) Pin = 1 W
P out , OUTPUT POWER (WATTS) PEP
NOT RECOMMENDED FOR NEW DESIGN
Pin = 0.6 W
Pin = 0.3 W
IDQ = 350 mA f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing 28 30 32
109
24
26
108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
VDD, DRAIN VOLTAGE (VOLTS)
Figure 10. Output Voltage versus Supply Voltage
Figure 11. MTTF Factor versus Junction Temperature
MRF9045NR1 6 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
1010
NOT RECOMMENDED FOR NEW DESIGN
Zo = 5 Zsource f = 945 MHz f = 930 MHz f = 930 MHz Zload f = 945 MHz
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz 930 945 Zsource 0.81 - j0.25 0.85 - j0.05 Zload 2.03 + j0.09 2.03 + j0.28
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF9045NR1 RF Device Data Freescale Semiconductor 7
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1 8 RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
RF Device Data Freescale Semiconductor
MRF9045NR1
9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
10
MRF9045NR1
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
NOT RECOMMENDED FOR NEW DESIGN
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 12 Date Sept. 2008 Description * Data sheet revised to reflect part status change, including use of applicable overlay. * Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. * Added Product Documentation and Revision History, p. 11
MRF9045NR1 RF Device Data Freescale Semiconductor 11
NOT RECOMMENDED FOR NEW DESIGN
Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
NOT RECOMMENDED FOR NEW DESIGN
How to Reach Us:
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MRF9045NR1
Rev. 12 12, 9/2008 Document Number: MRF9045N
RF Device Data Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN

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