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| SUM110N06-3M4L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) () 0.0034 at VGS = 10 V 0.0041 at VGS = 4.5 V ID (A) 110a FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT D TO-263 G G DS S Top View Ordering Information: SUM110N06-3M4L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 125 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 60 20 110a 110a 440 75 280 375b 3.75 - 55 to 175 mJ W C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). PCB Mountc Symbol RthJA RthJC Typical 40 0.4 Unit C/W Document Number: 73036 S-80272-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110N06-3M4L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 C VDS = 60 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec Fall Timec c c Symbol Test Conditions Min. 60 1 Typ. Max. Unit 3 100 1 50 10 V nA A mA A 120 0.0028 0.0033 0.0034 0.0041 0.0055 0.007 30 12900 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDS = 15 V, ID = 30 A S VGS = 0 V, VDS = 25 V, f = 1 MHz 1060 700 200 300 pF VDS = 30 V, VGS = 10 V, ID = 110 A f = 1.0 MHz VDD = 30 V, RL = 0.4 ID 110 A, VGEN = 10 V, Rg = 2.5 0.65 50 33 1.3 22 130 110 280 2 35 200 165 420 110 440 1.0 55 3.6 0.1 1.5 82 5.4 0.22 nC Timec ns Source-Drain Diode Ratings and Characteristics TC = 25 Cb IS Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge ISM VSD trr IRM(REC) Qrr IF = 110 A, di/dt = 100 A/s IF = 110 A, VGS = 0 V A V ns A C Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73036 S-80272-Rev. B, 11-Feb-08 SUM110N06-3M4L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 250 VGS = 10 thru 5 V 4V 200 I D - Drain Current (A) I D - Drain Current (A) 200 250 150 150 100 100 TC = 125 C 50 25 C - 55 C 50 3V 2V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 480 TC = - 55 C 400 g fs - Transconductance (S) 25 C 320 125 C 240 r DS(on) - On-Resistance () 0.005 0.006 Transfer Characteristics 0.004 VGS = 4.5 V 0.003 VGS = 10 V 0.002 160 80 0.001 0 0 20 40 60 80 100 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 18000 20 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 15000 C - Capacitance (pF) Ciss 16 VGS = 30 V ID = 110 A 12000 12 9000 8 6000 Coss Crss 0 5 10 15 20 25 30 35 40 3000 4 0 0 0 50 100 150 200 250 300 350 400 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73036 S-80272-Rev. B, 11-Feb-08 www.vishay.com 3 SUM110N06-3M4L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.3 VGS = 10 V ID = 30 A I S - Source Current (A) 100 2.0 rDS(on) - On-Resistance (Normalized) 1.7 TJ = 150 C 10 TJ = 25 C 1.4 1.1 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1000 74 72 100 I Dav (A) IAV (A) at T A = 25 C V(BR)DSS (V) Source-Drain Diode Forward Voltage ID = 10 mA 70 68 66 64 62 10 1 IAV (A) at T A = 150 C 0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 73036 S-80272-Rev. B, 11-Feb-08 SUM110N06-3M4L Vishay Siliconix THERMAL RATINGS 300 1000 10 s 250 100 I D - Drain Current (A) I D - Drain Current (A) 200 100 s 10 Limited by rDS(on)* 150 100 Package Limited 50 1 ms 10 ms 100 ms DC TC = 25 C Single Pulse 1 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (C) * VGS VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Maximum Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73036. Document Number: 73036 S-80272-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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