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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION *High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) *Good Linearity of hFE *Complement to Type 2SC6011 APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature -4 A PC 160 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA2151 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -10 A IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 A hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 450 pF fT Current-Gain--Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz hFE Classifications O 50-100 P 70-140 Y 90-180 isc Websitewww.iscsemi.cn 2 |
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