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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1159
DESCRIPTION *With TO-3PFa package *Complement to type 2SD1714 *High fT *Wide area of safe operation APPLICATIONS *For high power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -7 -12 80 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 MIN
2SB1159
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT
TYP.
MAX -2.0 -1.8 -50 -50
UNIT V V A A
200
220 20
pF MHz
hFE-2 classifications Q 60-120 S 80-160 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1159
Fig.2 Outline dimensions (unindicated tolerance:0.30mm)
3

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