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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1569 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) *Complement to Type 2SD2400 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -120 V -120 V -5 V -1.5 A -3.0 A 2 W 20 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1569 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 B -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50A; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50A; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Collector Output Capacitance w w scs .i w VEB= -4V; IC= 0 IC= -1A; VCE= -5V .cn mi e 100 50 30 -1.0 A -1.0 A 200 IC= -0.1A;VCE= -5V; ftest= 30MHz MHz IE= 0; VCE= -10V; ftest= 1MHz pF isc Websitewww.iscsemi.cn 2 |
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