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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB891F DESCRIPTION *With TO-126 package *Complement to type 2SD1189F *Low collector saturation voltage APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -40 -32 -5 -2 -3 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA ;IB=0 B 2SB891F MIN -32 -40 -5 TYP. MAX UNIT V V V IC=-50A ;IE=0 IE=-50A ;IC=0 IC=-2.0A; IB=-0.2A VCB=-20V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-3V IC=-0.5A ; VCE=-5V;f=30MHz IE=0; f=1MHz ; VCB=-10V -0.5 -0.8 -1.0 -1.0 V A A 82 100 50 390 MHz pF hFE-2 Classifications P 82-180 Q 120-270 R 180-390 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB891F Fig.2 Outline dimensions 3 |
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