|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3025 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 5 6 50 150 -45~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE= IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1500V; RBE= MIN 800 6 TYP. 2SC3025 MAX UNIT V V 2.0 1.5 0.5 V V mA Switching times ts tf Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time 0.5 s 4.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3025 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
Price & Availability of 2SC3025 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |