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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *High breakdown voltage *Wide area of safe operation APPLICATIONS *For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3055 * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Collector power dissipation Junction temperature Storage temperature PW300s,Duty cycle10% TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 7 2 4 15 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.5A; IB=0.1A IC=0.5A; IB=0.1A VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz ; VCB=10V 20 8 28 25 MIN 400 450 7 2SC3055 TYP. MAX UNIT V V V 1.0 1.2 10 10 80 V V A A MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3055 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
Price & Availability of 2SC3055
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