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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3577 DESCRIPTION With TO-3PFa package High breakdown voltage High speed APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 850 650 7 5 10 3 UNIT V V V A A A Open collector Collector current-peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 80 W 3 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3577 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.5A;L=50mH IC=3A ;IB=0.6A IC=3A ;IB=0.6A VCB=800V; VBE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V 10 6 MIN 650 1.5 1.5 50 50 |I |I TYP. MAX UNIT V V V A A SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 fT Switching times ton tstg tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 6 1.0 2.5 0.5 MHz |I |I |I s s s IC=3A; VCC=250V IB1=0.6A;IB2=-1.2A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3577 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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