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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION *With TO-3PN package *High breakdown voltage high reliability. *Wide area of safe operation *Fast switching speed APPLICATIONS *500V/25A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 25 40 8 150 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified 2SC3988 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEX(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ; IE=0 IC=5mA ;RBE=; IC=1mA ;IC=0 IC=10A;IB1=-IB2=2A; L=200H IC=12A; IB=2.4A IC=12A; IB=2.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=2.4A ; VCE=5V IC=12A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=2.4A ; VCE=10V MIN 800 500 7 500 TYP. MAX UNIT V V V V 1.0 1.5 10 10 15 8 260 18 50 V V A A pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time 5IB1=-2.5IB2= IC=14A VCCE200V;RL=14.3F 0.5 3.0 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3988 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 4 |
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