 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type NPN Silicon Epitaxia 2SD1005 Transistors Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Total power dissipation at 25 ambient temperature * Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC IC PT Rating 100 80 5 1 1.5 2 Unit V V V A A W Junction temperature Storage temperature *1. PW 10is,duty cycle 50% *2. When mounted on ceramic substrate of 16cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance *. PW 350is,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 100V, IE=0 VEB = 5V, IC=0 VCE =2V , IC = 100mA VCE =2V , IC = 500mA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA VBE fT Cob VCE =10V , IC = 10mA VCE = 5V , IE = -10mA VCB = 10V , IE = 0 , f = 1.0MHz 600 90 25 200 80 0.15 0.9 630 160 12 0.5 1.5 700 V V mV MHz pF Min Typ Max 100 100 400 Unit nA nA hFE Classification Marking hFE BW 90 180 BV 135 270 BU 200 400 www.kexin.com.cn 1 |
Price & Availability of 2SD1005
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |