 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1168 DESCRIPTION *With TO-3 package *High voltage ,high speed *Wide area of safe operation APPLICATIONS *For switching regulator applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION * Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 5 5 10 50 150 -65~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCER(SUS) V(BR)EBO VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=5A; RBE=10;L=2mH IE=1mA; IC=0 IC=2 A;IB=1A IC=2 A;IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE tf ts DC current gain Fall time IC=1.5 A; IB1=0.2A; IB2=-0.7A Storage time 2 IC=1A ; VCE=4V 9 MIN 800 5 TYP. 2SD1168 MAX UNIT V V 1.0 1.5 0.1 V V mA 1.0 25 0.5 s s hFE Classifications Q 9-18 P 15-25 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1168 Fig.2 Outline dimensions 3 |
Price & Availability of 2SD1168
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |