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| SMD Type Power Transistor 2SD1733 Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . +0.2 9.70 -0.2 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Low VCE (sat) . Epitaxial planer type NPN silicon transistor +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Tc = 25 Junction temperature Storage temperature * Pw=20ms. Tj Tstg Symbol VCBO VCEO VEBO IC IC (Pulse) * PC Rating 120 80 5 1 2 1 10 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50iA IC=1mA IE=50iA VCB=100V VEB=4V VCE=3V,IC=0.5A 82 0.15 100 20 Testconditons Min 120 80 5 1 1 390 0.4 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC=500mA,IB=20mA fT Cob VCE=10V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Rank hFE P 82 180 Q 120 270 R 180 390 3.80 www.kexin.com.cn 1 |
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