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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 DESCRIPTION *With TO-220F package *DARLINGTON *Complement to type 2SB1257 APPLICATIONS *Driver for solenoid,relay and motor, series regulator,and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 4 0.5 25 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=3mA IC=3A ;IB=3mA VCB=120V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=2V IE=-0.1A ; VCE=12V f=1MHz;VCB=10V 2000 MIN 80 2SD2014 TYP. MAX UNIT V 1.5 2.0 10 10 V V A mA 75 45 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=3.0A; IB1=-IB2=10mA VCC=30V ,RL=10 1.0 4.0 1.5 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2014 Fig.2 Outline dimensions 3 |
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