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| Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 110 Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open base 110 5 Open collector 6 1 60 150 -55~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 55 60 MIN 110 TYP. 2SD2493 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT MAX UNIT V 2.5 3.0 100 100 |I |I V V A A pF MHz Switching times ton ts tf hFE Classifications O 5000-12000 TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.8 |I IC=5A;RL=6| IB1=- IB2=5mA VCC=30V 6.2 Fall time 1.1 s |I |I s s P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2493 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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