![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896/898/900/902 Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD896 BD898 BD900 VCBO Collector-base voltage INCH VCEO VEBO IC IB PT Tj Tstg GE S AN BD902 BD896 BD898 BD900 BD902 Open emitter EMIC OND TOR UC VALUE -45 -60 -80 -100 -45 -60 UNIT V Collector-emitter voltage Open base -80 -100 Open collector -5 -8 -300 TC=25ae 70 V Emitter-base voltage Collector current-DC Base current Total power dissipation V A mA W Ta=25ae Junction temperature Storage temperature 2 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD896 BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 IC=-3A ,IB=-12mA IC=-3A ; VCE=-3V VCB=-45V, IE=0 TC=100ae VCB=-60V, IE=0 TC=100ae VCB=-80V, IE=0 TC=100ae VCB=-100V, IE=0 TC=100ae VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IE=-8A IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10| ;tp=20|I CONDITIONS BD896/898/900/902 SYMBOL MIN -45 -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -100 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 V V mA ICEO IEBO hFE VEC ton toff BD902 BD896 BD898 Collector cut-off current Emitter cut-off current DC current gain IN ANG CH BD900 BD902 SEM E OND IC TOR UC -0.5 mA -2 mA -0.2 -2.0 750 -3.5 1 s 5 |I |I V s s Diode forward voltage Turn-on time Turn-off time THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD896/898/900/902 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of BD896
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |