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| Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter SFH 4209 Wesentliche Merkmale * Leistungsstarke GaAs-LED (40mW) * Hoher Wirkunsgrad bei kleinen Stromen * Typische Peakwellenlange 950nm Anwendungen * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Batteriebetriebene Gerate (geringe Stromaufnahme) * Anwendungen mit hohen Zuverlassigkeitsanspruchen bzw. erhohten Anforderungen * Alarm- und Sicherungssysteme * IR Freiraumubertragung Typ Type SFH 4209 1) Features * High Power GaAs-LED (40mW) * High Efficiency at low currents * Typical peak wavelength 950nm Applications * High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Low power consumption (battery) equipment * Suitable for professional and high-reliability applications * Alarm and safety equipment * IR free air transmission Bestellnummer Ordering Code Q62702 P5488 Strahlstarkegruppierung 1) (IF = 100mA, tp = 20 ms) Radiant intensity grouping 1) Ie (mW/sr) 24 (>6.3) gemessen bei einem Raumwinkel = 0.01 sr measured at a solid angle of = 0.01 sr 2003-12-09 1 SFH 4209 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value - 40 ... + 100 3 100 2.2 180 450 Einheit Unit C V mA A mW K/W Top; Tstg VR IF (DC) IFSM Ptot Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block 200 K/W 2003-12-09 2 SFH 4209 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimensions of the active chip area Symbol Symbol peak Wert Value 950 Einheit Unit nm 40 nm 25 0.09 0.3 x 0.3 10 Grad deg. mm2 mm ns A LxB LxW Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, Reverse current VR = 3 V Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, VF VF IR 1.5 ( 1.8) 3.2 ( 4.3) 0.01 ( 10) V V A e 40 mW TCI - 0.44 %/K IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TCV TC - 1.5 + 0.2 mV/K nm/K 2003-12-09 3 SFH 4209 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Ie min. Ie typ. Ie typ. Werte Values 6,3 24 145 Einheit Unit mW/sr mW/sr mW/sr 2003-12-09 4 SFH 4209 Relative Spectral Emission Irel = f () 100 OHF00777 Radiant Intensity Ie = f (IF) Ie 100 mA Single pulse, tp = 20 s 10 2 e OHF00809 Max. Permissible Forward Current IF = f (TA), RthJA1) 120 OHF00359 erel 80 F mA 100 e (100 mA) 80 60 10 0 R thJA = 375 K/W 60 40 10 -1 40 20 10 -2 20 0 10 -3 10 0 800 850 900 950 1000 nm 1100 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 100 C 120 TA Forward Current IF = f (VF) single pulse, tp = 20 s 10 4 mA 10 3 10 2 10 1 OHF00784 Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter IF 101 A 5 OHF00040 F P D= T t tP IF T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 100 10 0 5 10 -1 10 -2 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 VF tp 10 0 1.0 OHL00732 Radiation Characteristics Irel = f () 40 30 20 50 0.8 60 0.6 70 0.4 80 90 0.2 0 1) 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Thermal resistance junction ambient mounted on PC-board (FR4), pad size 16 mm2 (each). 2003-12-09 5 SFH 4209 Mazeichnung Package Outlines 3.5 (0.138) max. 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 1 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) o2.60 (0.102) 1.1 (0.043) 0.5 (0.020) 0.6 (0.024) 0.4 (0.016) 0.1 (0.004) (typ.) 0.18 (0.007) 0.13 (0.005) 6 2 Package marking GEOY6956 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-12-09 o2.55 (0.100) 3.4 (0.134) 3.0 (0.118) 3.7 (0.146) 3.3 (0.130) |
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