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S T M9926
S amHop Microelectronics C orp. J an. 10 2008 ver1.0
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
6.5A
R DS (ON)
S uper high dense cell design for low R DS (ON).
28 @ V G S = 4.0V 38 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 10 6.5 30 1.7 2 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
R JA
62.5
C /W
S T M9926
E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS
c
S ymbol
Condition
VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.0V, ID = 6.5A VGS = 2.5V, ID = 5A VDS = 5.0V, ID = 6.5A
Min Typ C Max Unit
20 1 10 0.5 0.9 23 30 16 540 160 100 1.5 28 38 V uA uA V
m ohm m ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance
S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 10V, ID = 1A, VGEN = 4.5V, R L = 10 ohm R GE N = 10 ohm VDS =10V, ID =6.5A,VGS =4V VDS =10V, ID =6.5A,VGS =2.5V VDS =10V, ID = 6.5 A VGS =4V
2
15 20 36 11 6.4 4.6 1.1 2.8
ns ns ns ns nC nC nC nC
S T M9926
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.72 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
20 16 V G S =8V V G S =3V V G S =2.5V 12 V G S =2V 15 12
ID, Drain C urrent(A)
ID, Drain C urrent (A)
9
8
6 T j=125 C 3 0 0.0 25 C 0.4 0.8 1.2 1.6 2.0 2.4 -55 C
4
V G S =1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
60 1.5
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
50
1.4 1.3 1.2 1.1 1.0 0
V G S =2.5V ID=5A V G S =4V ID=6.5A
R DS (on) (m W)
40 V G S =2.5V 30 20 10 1 V G S =4V
1
4
8
12
16
20
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
S T M9926
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.20 ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
60
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=6.5A
Is , S ource-drain current (A)
50
10.0 5.0
125 C
R DS (on) (m W)
40 30 20 75 C 10 0 25 C
25 C 75 C
125 C
0
1
2
4
6
8
1.0
0
0.3
0.6
0.9
1.2
1.5
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M9926
C is s 500
V G S , G ate to S ource V oltage (V )
600
5 4 3 2 1 0 VDS =10V ID=6.5A
C , C apacitance (pF )
400 300 C os s 200 C rs s 100 0 0 2 4 6 8 10 12
6
0
1
2
3
4
5
6
7
8
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
600
S witching T ime (ns ) ID, Drain C urrent (A)
Tr TD(off) Tf TD(on)
F igure 10. G ate C harge
50 30 10
R
D
100 60 10
ON S(
)L
im
it
10
1s
10
ms
0m
s
1
DC
1 1
V DS =10V ,ID=1A V G S =4.5V
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 60
6 10
60 100 300 600
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
9
F igure 12. Maximum S afe O perating Area
Normalized Transient
Thermal Resistance
1
0.5 0.2
0.1
0.1 0.05 0.02 0.01
on
P DM t1 1. 2. 3. 4. t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T M9926
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45X
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
S Y MB OLS A A1 D E H L
MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X
6
S T M9926
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:P
PACKAGE SOP 8N 150O A0
6.40
B0
5.20
K0
2.10
D0
r1.5 (MIN)
D1
r1.5 + 0.1 - 0.0
E
12.0 O0.3
E1
1.75
E2
5.5 O0.05
P0
8.0
P1
4.0
P2
2.0 O0.05
T
0.3 O0.05
SO-8 Reel
UNIT:P
TAPE SIZE
12 P
REEL SIZE
r330
M
330 O 1
N
62 O1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
r12.75 + 0.15
K
S
2.0 O0.15
G
R
V
7

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