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| DC COMPONENTS CO., LTD. R TIP112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Total Power Dissipation Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IC PD PD TJ TSTG Rating 100 100 5 4 6 50 2 +150 -55 to +150 Unit V V V A A W W o o .625(15.87) .570(14.48) 123 .350(8.90) .330(8.38) .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICBO ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 Cob 380s, Duty Cycle 2% (1) Min 100 100 1K 500 - Typ - Max 1 2 2 2.5 2.8 200 Unit V V mA mA mA V V pF Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCE=10V, f=0.1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) Output Capacitance (1)Pulse Test: Pulse Width |
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