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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3771 2N3772 DESCRIPTION *With TO-3 package *High power and high current capability APPLICATIONS *For linear amplifiers, series pass regulators and inductive switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 CONDITIONS Open emitter VALUE 50 100 40 60 5 7 30 20 30 2N3771 2N3772 7.5 5.0 15 TC=25 150 200 -65~200 UNIT V VCEO Collector-emitter voltage Open base V VEBO Emitter-base voltage Open collector V IC ICM IB IBM PD Tj Tstg Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Junction temperature Storage temperature A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N3771 IC=0.2A ;IB=0 2N3772 2N3771 2N3772 2N3771 2N3772 2N3771 VBE Base-emitter on voltage 2N3772 2N3771 ICEO Collector cut-off current 2N3772 2N3771 ICEV Collector cut-off current 2N3772 2N3771 ICBO Emitter cut-off current 2N3772 2N3771 IEBO Emitter cut-off current 2N3772 2N3771 hFE-1 DC current gain 2N3772 2N3771 hFE-2 DC current gain 2N3772 fT Transition frequency Second breakdown energy with base forward biased 2N3771 2N3772 IC=20A ; VCE=4V IC=1.0A ; VCE=4V;f=50kHz VCE=40Vdc,t=1.0s, Nonrepetitive VCE=60Vdc,t=1.0s, Nonrepetitive IC=10A ; VCE=4V IC=30A ; VCE=4V VEB=7V; IC=0 IC=15A ; VCE=4V VCB=100V; IE=0 VEB=5V; IC=0 VCE=50V; IB=0 VCE=50V; VBE(off)=1.5V VCE=30V TC=150 VCE=100V; VBE(off)=1.5V VCE=45V TC=150 VCB=50V; IE=0 IC=10A ; VCE=4V VCE=30V; IB=0 IC=15A ;IB=1.5A IC=10A ;IB=1.0A IC=30A; IB=6A CONDITIONS SYMBOL 2N3771 2N3772 MIN 40 TYP. MAX UNIT VCEO(SUS) V 60 2.0 V 1.4 VCEsat-1 Collector-emitter saturation voltge VCEsat-2 Collector-emitter saturation voltage 4.0 IC=20A; IB=4A IC=15A ; VCE=4V 2.7 V V 2.2 10 2.0 10.0 5.0 10.0 2.0 mA mA mA 5.0 5.0 mA 15 60 5 0.2 3.75 MHz Is/b A 2.5 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3771 2N3772 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N3771 2N3772 4 |
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