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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA489 DESCRIPTION *With TO-220 package *Low collector saturation voltage *Short switching time APPLICATIONS *Various inductance lamp drivers for electrical equipment *Inverters;converters *Power amplification *Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -70 -60 -5 -4 30 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA489 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ,IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -70 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V A ICBO Collector cut-off current VCB=-70V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 A hFE DC current gain IC=-0.5A ; VCE=-5V 40 240 fT Transition frequency IC=-0.5A ; VCE=-5V 3 MHz hFE Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA489 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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