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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1009 DESCRIPTION With TO-126 package Complement to type 2SD1380 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature SEM GE Open base Ta=25ae OND IC TOR UC VALUE -40 -32 -5 -2 0.1 UNIT V V V A Open collector PD W TC=25ae 10 150 -55~150 ae ae Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1009 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -32 V VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A -0.8 V VBEsat Base-emitter saturation voltage IC=-2.0A ;IB=-0.2A -2.0 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 |I A IEBO Emitter cut-off current VEB=-3V; IC=0 -1 |I A hFE-1 DC current gain IC=-20mA ; VCE=-5V 40 hFE-2 DC current gain fT Transition frequency IC=-500mA ; VCE=-5V 82 390 IC=-500mA ; VCE=-5V COB Collector output capacitance HAN INC SEM GE f=1MHz ; VCB=-10V OND IC TOR UC 100 50 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1009 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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